DIODES DMN53D0LV-7

DIODES · FETs & Power MOSFETs · MPN DMN53D0LV-7

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Specifications

Current - Continuous Drain(Id)350mA
RDS(on)1Ω@10V
Pd - Power Dissipation430mW
Gate Threshold Voltage (Vgs(th))1.5V
Drain to Source Voltage50V
TypeN-Channel
Reverse Transfer Capacitance (Crss@Vds)4pF
Number1 N-channel
Input Capacitance(Ciss)46pF
Gate Charge(Qg)600pC@4.5V
Operating Temperature-55℃~+150℃
Output Capacitance(Coss)5.3pF

Technical details

N-Channel 50V 350mA 430mW Surface Mount SOT-563

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