DIODES DMN53D0LDW-13

DIODES · FETs & Power MOSFETs · MPN DMN53D0LDW-13

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Specifications

Current - Continuous Drain(Id)360mA
RDS(on)2.5Ω@4.5V
Pd - Power Dissipation310mW
Gate Threshold Voltage (Vgs(th))1.5V
Drain to Source Voltage50V
TypeN-Channel
Reverse Transfer Capacitance (Crss@Vds)4pF
Number2 N-Channel
Input Capacitance(Ciss)46pF
Gate Charge(Qg)600pC@4.5V
Operating Temperature-55℃~+150℃

Technical details

N-Channel Array 50V 360mA 310mW Surface Mount SOT-363

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