DIODES DMN53D0L-13

DIODES · FETs & Power MOSFETs · MPN DMN53D0L-13

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Specifications

Drain to Source Voltage50V
Gate Charge(Qg)600pC@4.5V
Current - Continuous Drain(Id)500mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation370mW
RDS(on)1.6Ω@10V
Number1 N-channel
Input Capacitance(Ciss)46pF

Technical details

N-Channel 50V 500mA 370mW Surface Mount SOT-23

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