DIODES · FETs & Power MOSFETs · MPN DMN52D0UV-7
No reviews yet — be the first to review DIODES DMN52D0UV-7.
| Current - Continuous Drain(Id) | 480mA |
|---|---|
| RDS(on) | 4Ω@1.8V |
| Pd - Power Dissipation | 890mW |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Drain to Source Voltage | 50V |
| Type | N-Channel |
| Gate Charge(Qg) | 1.5nC@10V |
| Operating Temperature | -55℃~+150℃ |
480mA 4Ω@1.8V 890mW 1V SOT-563 FET, MOSFET Arrays RoHS