DIODES · FETs & Power MOSFETs · MPN DMN52D0UQ-13
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| Drain to Source Voltage | 50V |
|---|---|
| Gate Charge(Qg) | 1.5nC@10V |
| Current - Continuous Drain(Id) | 400mA |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Pd - Power Dissipation | 700mW |
| RDS(on) | 4Ω@1.8V |
| Type | N-Channel |
50V 400mA 1V 700mW 4Ω@1.8V N-Channel SOT-23-3 Single FETs, MOSFETs RoHS