DIODES DMN4800LSSQ-13

DIODES · FETs & Power MOSFETs · MPN DMN4800LSSQ-13

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Specifications

Gate Charge(Qg)8.7nC
Drain to Source Voltage30V
Current - Continuous Drain(Id)8.6A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation1.46W
Reverse Transfer Capacitance (Crss@Vds)122pF
RDS(on)20mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)798pF

Technical details

N-Channel 30V 8.6A 1.46W Surface Mount SO-8

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