DIODES DMN4468LSS-13

DIODES · FETs & Power MOSFETs · MPN DMN4468LSS-13

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)18.85nC@10V
Current - Continuous Drain(Id)10A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.95V
Pd - Power Dissipation1.52W
Reverse Transfer Capacitance (Crss@Vds)81pF
RDS(on)14mΩ@10V;20mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)867pF

Technical details

N-Channel 30V 10A 1.52W Surface Mount SO-8

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