DIODES DMN4060SVTQ-13

DIODES · FETs & Power MOSFETs · MPN DMN4060SVTQ-13

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Specifications

Gate Charge(Qg)20nC@10V
Drain to Source Voltage45V
Current - Continuous Drain(Id)4.3A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation1.7W
RDS(on)62mΩ@4.5V

Technical details

45V 4.3A 3V 1.7W 62mΩ@4.5V TSOT-26 Single FETs, MOSFETs RoHS

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