DIODES DMN4060SVT-7

DIODES · FETs & Power MOSFETs · MPN DMN4060SVT-7

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Specifications

Gate Charge(Qg)22.4nC@10V
Drain to Source Voltage45V
Output Capacitance(Coss)57pF
Current - Continuous Drain(Id)4.8A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation1.8W
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)62mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)1.287nF
Type-

Technical details

45V 4.8A 1.8W Surface Mount TSOT-26

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