DIODES DMN4040SK3Q-13

DIODES · FETs & Power MOSFETs · MPN DMN4040SK3Q-13

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Specifications

Drain to Source Voltage40V
Gate Charge(Qg)18.6nC@10V
Current - Continuous Drain(Id)6A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation1.71W
RDS(on)30mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)945pF

Technical details

40V 6A 3V 1.71W 30mΩ@10V 1 N-channel TO-252(DPAK) Single FETs, MOSFETs RoHS

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