DIODES DMN4036LK3Q-13

DIODES · FETs & Power MOSFETs · MPN DMN4036LK3Q-13

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Specifications

Gate Charge(Qg)9.2nC@10V
Drain to Source Voltage40V
Current - Continuous Drain(Id)12.2A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation8.49W
RDS(on)36mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)453pF

Technical details

40V 12.2A 3V 8.49W 36mΩ@10V 1 N-channel TO-252 Single FETs, MOSFETs RoHS

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