DIODES · FETs & Power MOSFETs · MPN DMN4030LK3Q-13
No reviews yet — be the first to review DIODES DMN4030LK3Q-13.
| Gate Charge(Qg) | 12.9nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 9.6A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 4.18W |
| Reverse Transfer Capacitance (Crss@Vds) | 59.6pF |
| RDS(on) | 30mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 604pF |
40V 9.6A 3V 4.18W 30mΩ@10V 1 N-channel TO-252(DPAK) Single FETs, MOSFETs RoHS