DIODES DMN4026SSDQ-13

DIODES · FETs & Power MOSFETs · MPN DMN4026SSDQ-13

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Specifications

Current - Continuous Drain(Id)9A
Pd - Power Dissipation1.3W
RDS(on)32mΩ@4.5V
Gate Threshold Voltage (Vgs(th))3V
Drain to Source Voltage40V
Reverse Transfer Capacitance (Crss@Vds)58pF
Number2 N-Channel
Input Capacitance(Ciss)1.06nF
Gate Charge(Qg)19.1nC@10V
Operating Temperature-55℃~+150℃

Technical details

9A 1.3W 32mΩ@4.5V 3V 2 N-Channel SO-8 FET, MOSFET Arrays RoHS

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