DIODES DMN4026SK3-13

DIODES · FETs & Power MOSFETs · MPN DMN4026SK3-13

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Specifications

Gate Charge(Qg)21.3nC@10V
Drain to Source Voltage40V
Current - Continuous Drain(Id)28A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation1.6W
Reverse Transfer Capacitance (Crss@Vds)63pF
RDS(on)24mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.181nF

Technical details

N-Channel 40V 28A 1.6W Surface Mount TO-252

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