DIODES DMN39M1LK3-13

DIODES · FETs & Power MOSFETs · MPN DMN39M1LK3-13

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)38.6nC@10V
Current - Continuous Drain(Id)89.3A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation1.4W
TypeN-Channel

Technical details

30V 89.3A 2.5V 1.4W N-Channel TO-252(DPAK) Single FETs, MOSFETs RoHS

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