DIODES DMN39M1LFVW-7

DIODES · FETs & Power MOSFETs · MPN DMN39M1LFVW-7

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Specifications

Gate Charge(Qg)40nC@10V
Drain to Source Voltage30V
Current - Continuous Drain(Id)87A
Output Capacitance(Coss)292pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation2.7W
RDS(on)5mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)208pF
Input Capacitance(Ciss)2.387nF
TypeN-Channel

Technical details

30V 87A 2.5V 2.7W 5mΩ@10V N-Channel PowerDI3333-8 Single FETs, MOSFETs RoHS

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