DIODES · FETs & Power MOSFETs · MPN DMN3732UFB4Q-7B
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| Drain to Source Voltage | 30V |
|---|---|
| Gate Charge(Qg) | 900pC@4.5V |
| Current - Continuous Drain(Id) | 1.3A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 950mV |
| Pd - Power Dissipation | 1.12W |
| RDS(on) | 730mΩ@1.8V |
| Type | N-Channel |
30V 1.3A 950mV 1.12W 730mΩ@1.8V N-Channel X2-DFN1006-3 Single FETs, MOSFETs RoHS