DIODES DMN3730UFB-7

DIODES · FETs & Power MOSFETs · MPN DMN3730UFB-7

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)1.6nC@4.5V
Current - Continuous Drain(Id)910mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))950mV
Pd - Power Dissipation690mW
Reverse Transfer Capacitance (Crss@Vds)4.5pF
RDS(on)730mΩ@1.8V
Number1 N-channel
Input Capacitance(Ciss)64.3pF
TypeN-Channel

Technical details

N-Channel 30V 0.91A 0.69W Surface Mount X1-DFN1006-3

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