DIODES · FETs & Power MOSFETs · MPN DMN3401LDWQ-7
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| Configuration | - |
|---|---|
| Current - Continuous Drain(Id) | 800mA |
| Pd - Power Dissipation | 290mW |
| RDS(on) | 700mΩ@4.5V |
| Gate Threshold Voltage (Vgs(th)) | 1.6V |
| Drain to Source Voltage | 30V |
| Reverse Transfer Capacitance (Crss@Vds) | 10pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 50pF |
| Gate Charge(Qg) | 500pC@4.5V;1.2nC@10V |
| Operating Temperature | -55℃~+150℃ |
800mA 290mW 700mΩ@4.5V 1.6V 1 N-channel SOT-363 FET, MOSFET Arrays RoHS