DIODES · FETs & Power MOSFETs · MPN DMN3401LDWQ-13
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| Current - Continuous Drain(Id) | 800mA |
|---|---|
| Pd - Power Dissipation | 350mW |
| RDS(on) | 700mΩ@4.5V |
| Gate Threshold Voltage (Vgs(th)) | 1.6V |
| Drain to Source Voltage | 30V |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 10pF |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 50pF |
| Gate Charge(Qg) | 1.2nC@10V |
| Operating Temperature | - |
| Output Capacitance(Coss) | 12pF |
800mA 350mW 700mΩ@4.5V 1.6V 2 N-Channel SOT-363 FET, MOSFET Arrays RoHS