DIODES DMN3401LDW-13

DIODES · FETs & Power MOSFETs · MPN DMN3401LDW-13

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Specifications

Current - Continuous Drain(Id)800mA
Pd - Power Dissipation350mW
RDS(on)700mΩ@4.5V
Gate Threshold Voltage (Vgs(th))1.6V
Drain to Source Voltage30V
TypeN-Channel
Reverse Transfer Capacitance (Crss@Vds)10pF
Number2 N-Channel
Input Capacitance(Ciss)50pF
Gate Charge(Qg)1.2nC@10V
Operating Temperature-55℃~+150℃

Technical details

N-Channel Array 30V 0.8A 0.35W Surface Mount SOT-363

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