DIODES DMN33D9LV-7A

DIODES · FETs & Power MOSFETs · MPN DMN33D9LV-7A

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Specifications

Current - Continuous Drain(Id)350mA
Pd - Power Dissipation430mW
RDS(on)7Ω@2.5V
Gate Threshold Voltage (Vgs(th))1.4V
Drain to Source Voltage30V
TypeN-Channel
Reverse Transfer Capacitance (Crss@Vds)8pF
Number2 N-Channel
Input Capacitance(Ciss)48pF
Gate Charge(Qg)1.23nC@10V
Operating Temperature-55℃~+150℃
Output Capacitance(Coss)11pF

Technical details

N-Channel Array 30V 350mA 0.43W Surface Mount SOT-563

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