DIODES DMN33D9LV-7

DIODES · FETs & Power MOSFETs · MPN DMN33D9LV-7

No reviews yet — be the first to review DIODES DMN33D9LV-7.

Specifications

Current - Continuous Drain(Id)350mA
Pd - Power Dissipation430mW
RDS(on)7Ω@2.5V
Gate Threshold Voltage (Vgs(th))-
Drain to Source Voltage30V
Reverse Transfer Capacitance (Crss@Vds)8pF
Number2 N-Channel
Input Capacitance(Ciss)48pF
Gate Charge(Qg)1.23nC@10V
Operating Temperature-55℃~+150℃

Technical details

N-Channel Array 30V 350mA 0.43W Surface Mount SOT-563

Related FETs & Power MOSFETs