DIODES · FETs & Power MOSFETs · MPN DMN33D9LV-13
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| Current - Continuous Drain(Id) | 350mA |
|---|---|
| Pd - Power Dissipation | 430mW |
| RDS(on) | 7Ω@2.5V |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Drain to Source Voltage | 30V |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 48pF |
| Gate Charge(Qg) | 1.23nC@10V |
| Operating Temperature | -55℃~+150℃ |
| Output Capacitance(Coss) | - |
350mA 430mW 7Ω@2.5V 1.5V 2 N-Channel SOT-563 FET, MOSFET Arrays RoHS