DIODES DMN33D8LVQ-13

DIODES · FETs & Power MOSFETs · MPN DMN33D8LVQ-13

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Specifications

Current - Continuous Drain(Id)350mA
Pd - Power Dissipation430mW
RDS(on)7Ω@2.5V
Gate Threshold Voltage (Vgs(th))1.5V
Drain to Source Voltage30V
TypeN-Channel
Gate Charge(Qg)1.23nC@10V
Operating Temperature-55℃~+150℃

Technical details

350mA 430mW 7Ω@2.5V 1.5V SOT-563 FET, MOSFET Arrays RoHS

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