DIODES DMN33D8LTQ-7

DIODES · FETs & Power MOSFETs · MPN DMN33D8LTQ-7

No reviews yet — be the first to review DIODES DMN33D8LTQ-7.

Specifications

Drain to Source Voltage30V
Gate Charge(Qg)550pC@10V
Current - Continuous Drain(Id)115mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation240mW
Reverse Transfer Capacitance (Crss@Vds)8pF
RDS(on)5Ω@4V
Number1 N-channel
Input Capacitance(Ciss)48pF

Technical details

30V 115mA 1.5V 240mW 5Ω@4V 1 N-channel SOT-523 Single FETs, MOSFETs RoHS

Related FETs & Power MOSFETs