DIODES DMN33D8LTQ-13

DIODES · FETs & Power MOSFETs · MPN DMN33D8LTQ-13

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)1.23nC@10V
Output Capacitance(Coss)11pF
Current - Continuous Drain(Id)115mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation300mW
Reverse Transfer Capacitance (Crss@Vds)8pF
RDS(on)5Ω@4V
Number1 N-channel
Input Capacitance(Ciss)48pF
TypeN-Channel

Technical details

N-Channel 30V 115mA 300mW Surface Mount SOT-523

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