DIODES DMN33D8LT-13

DIODES · FETs & Power MOSFETs · MPN DMN33D8LT-13

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)1.2nC
Current - Continuous Drain(Id)250mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation350mW
Reverse Transfer Capacitance (Crss@Vds)10pF
RDS(on)-
Number1 N-channel
Input Capacitance(Ciss)50pF

Technical details

N-Channel 30V 250mA 350mW Surface Mount SOT-523

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