DIODES DMN33D8LDWQ-7

DIODES · FETs & Power MOSFETs · MPN DMN33D8LDWQ-7

No reviews yet — be the first to review DIODES DMN33D8LDWQ-7.

Specifications

Current - Continuous Drain(Id)250mA
Pd - Power Dissipation350mW
RDS(on)7Ω@2.5V
Gate Threshold Voltage (Vgs(th))1.5V
Drain to Source Voltage30V
TypeN-Channel
Gate Charge(Qg)1.23nC@10V
Operating Temperature-55℃~+150℃

Technical details

250mA 350mW 7Ω@2.5V 1.5V SOT-363 FET, MOSFET Arrays RoHS

Related FETs & Power MOSFETs