DIODES DMN33D8LDW-7

DIODES · FETs & Power MOSFETs · MPN DMN33D8LDW-7

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Specifications

Current - Continuous Drain(Id)250mA
RDS(on)2.4Ω@10V
Pd - Power Dissipation350mW
Gate Threshold Voltage (Vgs(th))1.5V
Drain to Source Voltage30V
Number2 N-Channel
Input Capacitance(Ciss)48pF
Gate Charge(Qg)1.23nC@10V
Operating Temperature-55℃~+150℃

Technical details

N-Channel Array 30V 250mA 350mW Surface Mount SOT-363

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