DIODES DMN32D2LFB4-7

DIODES · FETs & Power MOSFETs · MPN DMN32D2LFB4-7

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Specifications

Gate Charge(Qg)-
Drain to Source Voltage30V
Output Capacitance(Coss)20pF
Current - Continuous Drain(Id)300mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.2V
Pd - Power Dissipation350mW
Reverse Transfer Capacitance (Crss@Vds)7.2pF
RDS(on)1.5Ω@2.5V
Number1 N-channel
Input Capacitance(Ciss)78pF
Type-

Technical details

30V 300mA 350mW Surface Mount X2-DFN1006-3

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