DIODES DMN32D0LVQ-7

DIODES · FETs & Power MOSFETs · MPN DMN32D0LVQ-7

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Specifications

Current - Continuous Drain(Id)680mA
RDS(on)2.2Ω@1.8V
Pd - Power Dissipation480mW
Gate Threshold Voltage (Vgs(th))1.2V
Drain to Source Voltage30V
TypeN-Channel
Gate Charge(Qg)620pC@4.5V
Operating Temperature-55℃~+150℃

Technical details

680mA 2.2Ω@1.8V 480mW 1.2V SOT-563 FET, MOSFET Arrays RoHS

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