DIODES DMN32D0LFB4-7B

DIODES · FETs & Power MOSFETs · MPN DMN32D0LFB4-7B

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)600pC@4.5V
Current - Continuous Drain(Id)440mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.2V
Pd - Power Dissipation350mW
Reverse Transfer Capacitance (Crss@Vds)2.5pF
RDS(on)1.2Ω@4V
Number1 N-channel
Input Capacitance(Ciss)44.8pF

Technical details

30V 440mA 1.2V 350mW 1.2Ω@4V 1 N-channel X2-DFN1006-3 Single FETs, MOSFETs RoHS

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