DIODES DMN3270UVT-7

DIODES · FETs & Power MOSFETs · MPN DMN3270UVT-7

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Specifications

Current - Continuous Drain(Id)1.6A
RDS(on)3Ω@1.5V
Pd - Power Dissipation1.08W
Gate Threshold Voltage (Vgs(th))900mV
Drain to Source Voltage30V
TypeN-Channel
Reverse Transfer Capacitance (Crss@Vds)7.5pF
Number2 N-Channel
Input Capacitance(Ciss)161pF
Gate Charge(Qg)3.07nC@4.5V
Operating Temperature-55℃~+150℃
Output Capacitance(Coss)26pF

Technical details

1.6A 3Ω@1.5V 1.08W 900mV 2 N-Channel TSOT-26 FET, MOSFET Arrays RoHS

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