DIODES DMN31D6UT-7

DIODES · FETs & Power MOSFETs · MPN DMN31D6UT-7

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Specifications

Gate Charge(Qg)350pC@4.5V
Drain to Source Voltage30V
Current - Continuous Drain(Id)350mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.4V
Pd - Power Dissipation210mW
Reverse Transfer Capacitance (Crss@Vds)2.2pF
RDS(on)1.5Ω@4.5V
Number1 N-channel
Input Capacitance(Ciss)13.6pF

Technical details

30V 350mA 1.4V 210mW 1.5Ω@4.5V 1 N-channel SOT-523 Single FETs, MOSFETs RoHS

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