DIODES DMN3190LDWQ-7

DIODES · FETs & Power MOSFETs · MPN DMN3190LDWQ-7

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Specifications

Current - Continuous Drain(Id)1A
Pd - Power Dissipation400mW
RDS(on)335mΩ@4.5V
Gate Threshold Voltage (Vgs(th))2.8V
Drain to Source Voltage30V
TypeN-Channel
Number2 N-Channel
Input Capacitance(Ciss)87pF
Gate Charge(Qg)2nC@10V
Operating Temperature-55℃~+150℃

Technical details

N-Channel Array 30V 1A 0.4W Surface Mount SOT-363

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