DIODES · FETs & Power MOSFETs · MPN DMN3190LDWQ-13
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| Current - Continuous Drain(Id) | 1A |
|---|---|
| Pd - Power Dissipation | 400mW |
| RDS(on) | 335mΩ@4.5V |
| Gate Threshold Voltage (Vgs(th)) | 2.8V |
| Drain to Source Voltage | 30V |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | - |
| Gate Charge(Qg) | 2nC@10V |
| Operating Temperature | -55℃~+150℃ |
| Output Capacitance(Coss) | - |
1A 400mW 335mΩ@4.5V 2.8V 2 N-Channel SOT-363 FET, MOSFET Arrays RoHS