DIODES DMN3190LDW-7

DIODES · FETs & Power MOSFETs · MPN DMN3190LDW-7

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Specifications

Current - Continuous Drain(Id)1A
Pd - Power Dissipation400mW
RDS(on)122mΩ@10V;181mΩ@4.5V
Gate Threshold Voltage (Vgs(th))2.8V
Drain to Source Voltage30V
TypeN-Channel
Reverse Transfer Capacitance (Crss@Vds)12pF
Number2 N-Channel
Input Capacitance(Ciss)87pF
Gate Charge(Qg)900pC@4.5V;2nC@10V
Operating Temperature-55℃~+150℃
Output Capacitance(Coss)17pF

Technical details

N-Channel Array 30V 1A 0.4W Surface Mount SC-70-6(SOT-363)

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