DIODES DMN3110S-7

DIODES · FETs & Power MOSFETs · MPN DMN3110S-7

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Specifications

Gate Charge(Qg)8.6nC@10V
Drain to Source Voltage30V
Output Capacitance(Coss)39.9pF
Current - Continuous Drain(Id)3.3A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation1.3W
Reverse Transfer Capacitance (Crss@Vds)39.5pF
RDS(on)54mΩ@10V;88mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)305.8pF

Technical details

N-Channel 30V 3.3A 1.3W Surface Mount SOT-23

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