DIODES DMN30H4D0LFDE-7

DIODES · FETs & Power MOSFETs · MPN DMN30H4D0LFDE-7

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Specifications

Gate Charge(Qg)7.6nC@10V
Drain to Source Voltage300V
Output Capacitance(Coss)8.7pF
Current - Continuous Drain(Id)550mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.8V
Pd - Power Dissipation1.98W
Reverse Transfer Capacitance (Crss@Vds)8.7pF
RDS(on)6Ω@2.7V
Number1 N-channel
Input Capacitance(Ciss)11.7pF
TypeN-Channel

Technical details

N-Channel 300V 0.55A 1.98W Surface Mount UDFN2020-6

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