DIODES · FETs & Power MOSFETs · MPN DMN30H4D0LFDE-13
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| Drain to Source Voltage | 300V |
|---|---|
| Gate Charge(Qg) | 7.6nC@10V |
| Current - Continuous Drain(Id) | 550mA |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.8V |
| Pd - Power Dissipation | 630mW |
| Reverse Transfer Capacitance (Crss@Vds) | 8.7pF |
| RDS(on) | 4Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 187.3pF |
300V 550mA 2.8V 630mW 4Ω@10V 1 N-channel UDFN2020-6 Single FETs, MOSFETs RoHS