DIODES DMN30H4D0L-13

DIODES · FETs & Power MOSFETs · MPN DMN30H4D0L-13

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Specifications

Drain to Source Voltage300V
Gate Charge(Qg)7.6nC
Current - Continuous Drain(Id)250mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation310mW
Reverse Transfer Capacitance (Crss@Vds)8.7pF
RDS(on)4Ω@10V
Number1 N-channel
Input Capacitance(Ciss)187.3pF

Technical details

N-Channel 300V 0.25A 0.31W Surface Mount SOT-23-3

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