DIODES · FETs & Power MOSFETs · MPN DMN3070SSN-7
No reviews yet — be the first to review DIODES DMN3070SSN-7.
| Gate Charge(Qg) | 13.2nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 5.1A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.1V |
| Pd - Power Dissipation | 780mW |
| Reverse Transfer Capacitance (Crss@Vds) | 67pF |
| RDS(on) | 50mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 697pF |
30V 5.1A 2.1V 780mW 50mΩ@4.5V 1 N-channel SC-59 Single FETs, MOSFETs RoHS