DIODES DMN3069L-13

DIODES · FETs & Power MOSFETs · MPN DMN3069L-13

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)8.1nC@10V
Current - Continuous Drain(Id)5.3A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.8V
Pd - Power Dissipation1.3W
Reverse Transfer Capacitance (Crss@Vds)47pF
RDS(on)30mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)309pF

Technical details

30V 5.3A 1.8V 1.3W 30mΩ@10V 1 N-channel SOT-23-3 Single FETs, MOSFETs RoHS

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