DIODES DMN3067LW-13

DIODES · FETs & Power MOSFETs · MPN DMN3067LW-13

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)4.6nC@4.5V
Current - Continuous Drain(Id)2.6A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation1.1W
RDS(on)98mΩ@2.5V
Number1 N-channel
Input Capacitance(Ciss)447pF

Technical details

N-Channel 30V 2.6A 1.1W Surface Mount SOT-323

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