DIODES DMN3066L-13

DIODES · FETs & Power MOSFETs · MPN DMN3066L-13

5.0/5 from 1 engineer review.

Specifications

Drain to Source Voltage30V
Gate Charge(Qg)4.1nC@4.5V
Current - Continuous Drain(Id)3.6A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation1.33W
Reverse Transfer Capacitance (Crss@Vds)42pF
RDS(on)67mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)353pF

Technical details

30V 3.6A 1.5V 1.33W 67mΩ@4.5V 1 N-channel SOT-23-3 Single FETs, MOSFETs RoHS

Reviews

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