DIODES DMN3065LW-7

DIODES · FETs & Power MOSFETs · MPN DMN3065LW-7

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Specifications

Gate Charge(Qg)11.7nC@10V
Drain to Source Voltage30V
Output Capacitance(Coss)49.5pF
Current - Continuous Drain(Id)4A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation770mW
Reverse Transfer Capacitance (Crss@Vds)43.8pF
RDS(on)85mΩ@2.5V
Number1 N-channel
Input Capacitance(Ciss)465pF
TypeN-Channel

Technical details

N-Channel 30V 4A 770mW Surface Mount SOT-323

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