DIODES DMN3061SWQ-13

DIODES · FETs & Power MOSFETs · MPN DMN3061SWQ-13

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Specifications

Output Capacitance(Coss)44pF
Pd - Power Dissipation770mW
Configuration-
Gate Charge(Qg)3.5nC@4.5V
Drain to Source Voltage30V
Current - Continuous Drain(Id)2.7A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.8V
Reverse Transfer Capacitance (Crss@Vds)29pF
RDS(on)41mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)278pF

Technical details

30V 2.7A 770mW Surface Mount SOT-323

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