DIODES DMN3061SVTQ-7

DIODES · FETs & Power MOSFETs · MPN DMN3061SVTQ-7

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Specifications

Current - Continuous Drain(Id)3.4A
RDS(on)100mΩ@4.5V
Pd - Power Dissipation1.08W
Gate Threshold Voltage (Vgs(th))1.8V
Drain to Source Voltage30V
TypeN-Channel
Number2 N-Channel
Gate Charge(Qg)6.6nC@10V
Operating Temperature-55℃~+150℃

Technical details

N-Channel 30V 3.4A 1.08W Surface Mount TSOT-26

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