DIODES DMN3061SVTQ-13

DIODES · FETs & Power MOSFETs · MPN DMN3061SVTQ-13

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Specifications

Current - Continuous Drain(Id)3.4A
RDS(on)100mΩ@4.5V
Pd - Power Dissipation1.08W
Gate Threshold Voltage (Vgs(th))1.8V
Drain to Source Voltage30V
TypeN-Channel
Reverse Transfer Capacitance (Crss@Vds)29pF
Input Capacitance(Ciss)278pF
Gate Charge(Qg)6.6nC@10V
Operating Temperature-55℃~+150℃
Output Capacitance(Coss)44pF

Technical details

3.4A 100mΩ@4.5V 1.08W 1.8V TSOT-26 FET, MOSFET Arrays RoHS

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